This device is an N-channel trench power MOSFET intended for PWM, load switching, and general-purpose power switching applications. It is rated for 60 V drain-source voltage and 80 A continuous drain current at TC = 25°C, with 5.8 mΩ typical on-resistance at 10 V gate drive. The design features low gate charge, fast switching, and reverse body recovery for efficient switching performance. It is offered in a TO-263 (D2PAK) package and supports junction and storage temperatures from -55°C to +150°C.
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Silikron Microelectronics (Suzhou) Co.,Ltd SSF6808A3 technical specifications.
| Channel Type | N-Channel |
| Process Technology | Trench MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80A |
| Pulsed Drain Current | 320A |
| Power Dissipation | 108W |
| Gate-Source Voltage | ±20V |
| Single Pulse Avalanche Energy | 410mJ |
| On-Resistance | 5.8 typ, 8 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 71.2 typnC |
| Input Capacitance | 3934 typpF |
| Output Capacitance | 209 typpF |
| Reverse Transfer Capacitance | 191 typpF |
| Reverse Recovery Time | 31.4 typns |
| Operating Junction Temperature | -55 to +150°C |
| Thermal Resistance Junction-to-Case | 1.4 max°C/W |
| Package | TO-263 (D2PAK) |
