This device is a 60 V N-channel enhancement-mode power MOSFET in a TO220 package. It is rated for 160 A continuous drain current at 25°C, 110 A at 100°C, and 230 W power dissipation at 25°C. The datasheet specifies a maximum drain-source on-resistance of 5.5 mΩ at VGS = 10 V and ID = 75 A, with typical total gate charge of 99.5 nC. The gate-to-source voltage rating is ±20 V, the operating junction temperature range is -55°C to +175°C, and the body diode reverse recovery time is typically 45.7 ns.
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Silikron Semiconductor Co., LTD. SSPL6005 technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ 25°C | 160A |
| Continuous Drain Current @ 100°C | 110A |
| Pulsed Drain Current | 640A |
| Power Dissipation @ 25°C | 230W |
| Drain-Source On-Resistance | 5.5 maxmΩ |
| Gate-Source Voltage | ±20V |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 99.5 typnC |
| Input Capacitance | 7916 typpF |
| Output Capacitance | 733 typpF |
| Reverse Transfer Capacitance | 60 typpF |
| Junction-to-Case Thermal Resistance | 0.65 max°C/W |
| Operating Junction Temperature Range | -55 to +175°C |
| Reverse Recovery Time | 45.7 typns |
