N-channel power MOSFET uses an advanced MOSFET process for low on-resistance and high repetitive avalanche capability. The device is rated for 100 V drain-source voltage and 200 A continuous drain current at 25 °C case temperature, with a typical 4.6 mΩ on-resistance at 10 V gate drive. It supports PWM, load switching, and general-purpose power switching applications with fast switching and reverse body recovery. The TO-220 package operates over a -55 °C to 175 °C junction and storage temperature range, and tube packaging is specified at 50 units per tube.
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| Transistor Polarity | N-channel |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C Case | 200A |
| Continuous Drain Current at 100°C Case | 130A |
| Pulsed Drain Current | 800A |
| Static Drain-Source On-Resistance | 4.6 typical, 6 maximum at VGS=10 V and ID=30 AmΩ |
| Gate Threshold Voltage | 2 minimum, 4 maximumV |
| Gate-Source Voltage | ±20V |
| Power Dissipation at 25°C Case | 326W |
| Linear Derating Factor | 2.2W/°C |
| Single Pulse Avalanche Energy | 614 at L=0.3 mHmJ |
| Avalanche Current | 64 at L=0.3 mHA |
| Operating Junction Temperature Range | -55 to 175°C |
| Storage Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.46 maximum°C/W |
| Junction-to-Ambient Thermal Resistance | 62 maximum, t≤10 s°C/W |
| Total Gate Charge | 242 typicalnC |
| Input Capacitance | 9807 typicalpF |
| Body Diode Continuous Source Current | 200 maximumA |
| Body Diode Forward Voltage | 0.88 typical, 1.3 maximumV |
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