N-channel enhancement-mode MOSFET provides a 100 V drain-source voltage rating and an 80 A continuous drain current rating at 25 °C case temperature. The TO-220 device has a typical on-resistance of 6 mΩ at 10 V gate drive and 40 A drain current. It supports 175 °C maximum junction temperature, 300 W maximum power dissipation, and low junction-to-case thermal resistance. The device is specified as lead-free, halogen-free, and RoHS compliant.
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| Transistor Type | N-channel enhancement-mode MOSFET |
| Drain-Source Voltage | 100V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current | 80 at Tc=25°CA |
| Pulsed Drain Current | 480A |
| Maximum Power Dissipation | 300 at Tc=25°CW |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Thermal Resistance Junction-to-Case | 0.5°C/W |
| Thermal Resistance Junction-to-Ambient | 62.5°C/W |
| Drain-Source Breakdown Voltage | 100 minV |
| Gate Threshold Voltage | 2 min, 3 typ, 4 maxV |
| Drain-Source On-State Resistance | 6 typ, 7.4 max at Vgs=10V, Id=40AmΩ |
| Diode Forward Voltage | 0.8 typ, 1.1 maxV |
| Input Capacitance | 3400 typ, 4420 maxpF |
| Output Capacitance | 900 typpF |
| Reverse Transfer Capacitance | 400 typpF |
| Total Gate Charge | 110 typ, 160 maxnC |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
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