N-channel power MOSFET family members use 100 V drain-source breakdown voltage and ±20 V gate-source rating. Continuous drain current is listed up to 87 A to 90 A at case temperature 25 °C depending on the orderable suffix and package. Maximum on-resistance is specified from 7.4 mΩ to 7.7 mΩ at 10 V gate drive, with logic-level 4.5 V ratings also provided. Gate threshold voltage is specified from 1 V to 3 V, and typical input capacitance is 3000 pF.
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| Configuration | N-channel |
| Drain-source breakdown voltage | 100V |
| Gate-source voltage | ±20V |
| Continuous drain current at TC=25°C | 87 to 90A |
| Continuous drain current at TA=25°C | 12.4 to 12.7A |
| Gate threshold voltage minimum | 1V |
| Gate threshold voltage typical | 2V |
| Gate threshold voltage maximum | 3V |
| Drain-source on-resistance at VGS=10V maximum | 7.4 to 7.7mΩ |
| Drain-source on-resistance at VGS=4.5V maximum | 9.5 to 10mΩ |
| Gate resistance typical | 1.5Ω |
| Input capacitance typical | 3000pF |
| Output capacitance typical | 410pF |
| Reverse transfer capacitance typical | 40pF |
| Total gate charge at 10V typical | 50 to 57nC |
| Total gate charge at 10V maximum | 70 to 80nC |
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