N-channel power MOSFET rated for 30 V drain-source and ±20 V gate-source operation. It supports continuous drain current up to 100 A at TC=25°C or 36 A at TA=25°C, with maximum RDS(on) of 1.14 mΩ at 10 V and 1.7 mΩ at 4.5 V. The device is offered in a DFN5x6A-8_EP1 package and lists typical input, output, and reverse transfer capacitances of 9050 pF, 970 pF, and 576 pF. Total gate charge is 153 nC typical at 10 V and 73 nC typical at 4.5 V.
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| Product type | MOSFET |
| Channel type | N |
| Drain-source voltage | 30V |
| Gate-source voltage | ±20V |
| Continuous drain current (TC=25°C) | 100A |
| Continuous drain current (TA=25°C) | 36A |
| Threshold voltage min | 1.3V |
| Threshold voltage typ | 1.7V |
| Threshold voltage max | 2.5V |
| RDS(on) max at VGS=10V | 1.14mΩ |
| RDS(on) max at VGS=4.5V | 1.7mΩ |
| Gate resistance typ | 1Ω |
| Gate resistance max | 2Ω |
| Input capacitance typ | 9050pF |
| Output capacitance typ | 970pF |
| Reverse transfer capacitance typ | 576pF |
| Total gate charge typ at 10V | 153nC |
| Total gate charge max at 10V | 214nC |
| Total gate charge typ at 4.5V | 73nC |
| Gate-source charge | 27nC |
| Gate-drain charge | 27nC |
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