N-channel enhancement-mode power MOSFET rated for 30 V drain-source voltage and ±20 V gate-source voltage. It is offered in a DFN5x6A-8_EP1 package and supports continuous drain current up to 219 A at TC = 25°C or 37.4 A at TA = 25°C. Maximum on-resistance is 1.05 mΩ at VGS = 10 V and 1.65 mΩ at VGS = 4.5 V. Typical input, output, and reverse-transfer capacitances are 5485 pF, 1850 pF, and 115 pF, respectively. Typical total gate charge is 85 nC at 10 V and 41.6 nC at 4.5 V.
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| Configuration | N |
| Drain-Source Voltage | 30V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 219A |
| Continuous Drain Current (TA=25°C) | 37.4A |
| Gate Threshold Voltage Min | 1.2V |
| Gate Threshold Voltage Typ | 1.6V |
| Gate Threshold Voltage Max | 2.2V |
| RDS(on) Max @ VGS=10V | 1.05mΩ |
| RDS(on) Max @ VGS=4.5V | 1.65mΩ |
| Gate Resistance Typ | 1Ω |
| Gate Resistance Max | 2Ω |
| Input Capacitance Typ | 5485pF |
| Output Capacitance Typ | 1850pF |
| Reverse Transfer Capacitance Typ | 115pF |
| Total Gate Charge Typ @ 10V | 85nC |
| Total Gate Charge Max @ 10V | 119nC |
| Total Gate Charge Typ @ 4.5V | 41.6nC |
| Gate-Source Charge | 15nC |
| Gate-Drain Charge | 10.8nC |
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