This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage and 210 A continuous drain current at 25 °C case temperature. It specifies a maximum on-resistance of 3.4 mΩ at a 10 V gate drive and supports junction temperatures up to 175 °C. The part is offered in a TO-220 package with GDS pinout and is intended for synchronous rectification and power management in inverter systems. The datasheet lists low switching times, 100 nC typical total gate charge, and RoHS-oriented lead-free green device availability for the SM6008NF/SM6008NFP family.
Checking distributor stock and pricing after the page loads.
Sinopower Semiconductor SM6008NF technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 210A |
| Continuous Drain Current (Silicon Limited, Tc=100°C) | 150A |
| Continuous Drain Current (Wire Bond Limited, Tc=25°C) | 120A |
| Maximum Power Dissipation (Tc=25°C) | 300W |
| Junction Temperature Max | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Drain-Source On-Resistance | 3.4 max @ VGS=10VmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Forward Transconductance | 100 minS |
| Body Diode Forward Voltage | 0.8 typ, 1.1 maxV |
| Input Capacitance | 3600 typ, 4680 maxpF |
| Output Capacitance | 1300 typpF |
| Reverse Transfer Capacitance | 550 typpF |
| Turn-On Delay Time | 20 typ, 38 maxns |
| Turn-On Rise Time | 25 typ, 45 maxns |
| Turn-Off Delay Time | 72 typ, 130 maxns |
| Turn-Off Fall Time | 100 typ, 180 maxns |
| Total Gate Charge | 100 typ, 150 maxnC |
| Gate-Source Charge | 25 typnC |
| Gate-Drain Charge | 35 typnC |
