This N-channel power MOSFET is rated for 60 V drain-to-source voltage and ±25 V gate-to-source voltage. The device supports 160 A continuous drain current at TC = 25°C and 16 A at TA = 25°C. Maximum RDS(on) is 3.6 mΩ at 10 V gate drive. Typical input, output, and reverse-transfer capacitances are 6000 pF, 920 pF, and 435 pF, and total gate charge is 115 nC typical at 10 V. It is offered in a TO-220 package.
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Sinopower Semiconductor SM6009NSF technical specifications.
| Configuration | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (TC=25°C) | 160A |
| Continuous Drain Current (TA=25°C) | 16A |
| Gate Threshold Voltage (min) | 2V |
| Gate Threshold Voltage (typ) | 3V |
| RDS(on) max @ VGS=10V | 3.6mΩ |
| Gate Resistance (typ) | 1Ω |
| Input Capacitance (typ) | 6000pF |
| Output Capacitance (typ) | 920pF |
| Reverse Transfer Capacitance (typ) | 435pF |
| Total Gate Charge (typ) @ 10V | 115nC |
| Total Gate Charge (max) @ 10V | 160nC |
| Gate-Source Charge | 35nC |
| Gate-Drain Charge | 30nC |
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