This device is an N-channel enhancement-mode MOSFET rated for 60 V drain-source voltage and 100 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-source on-resistance of 7.2 mΩ at 10 V gate drive and is packaged in a TO-220 through-hole package. The datasheet lists a junction temperature range from -55°C to 150°C, 400 A pulsed drain current, and 131 W maximum power dissipation at 25°C case temperature. It is intended for power management in inverter systems and is described as lead-free, RoHS compliant, and halogen free.
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Sinopower Semiconductor SM6017NBF technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 100A |
| Continuous Drain Current at 100°C | 63A |
| Pulsed Drain Current | 400A |
| Gate-Source Voltage | ±25V |
| On-Resistance RDS(on) Max | 7.2mΩ |
| On-Resistance RDS(on) Typ | 6mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Maximum Power Dissipation at Tc=25°C | 131W |
| Junction Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 0.95°C/W |
| Input Capacitance Ciss Typ | 3500pF |
| Output Capacitance Coss Typ | 425pF |
| Reverse Transfer Capacitance Crss Typ | 210pF |
| Total Gate Charge Typ | 66nC |
| Reverse Recovery Time Typ | 30ns |
| Package Type | TO-220 |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
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