This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage. It supports up to 110 A continuous drain current at 25°C case temperature with a maximum drain-source on-resistance of 8 mΩ at 10 V gate drive. The part is supplied in a TO-220 package and is specified for tube packaging with 50 units per tube. The datasheet states a maximum junction temperature of 175°C, single-pulse avalanche energy of 1.0 J, and lead-free, RoHS-compliant, halogen-free construction.
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Sinopower Semiconductor SM6017NSF technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (Silicon Limited, Tc=25°C) | 110A |
| Continuous Drain Current (Silicon Limited, Tc=100°C) | 80A |
| Continuous Drain Current (Wire Bond Limited, Tc=25°C) | 80A |
| Pulse Drain Current | 390A |
| Drain-Source On-Resistance (Typ @ Vgs=10V, Id=40A) | 6.5mΩ |
| Drain-Source On-Resistance (Max @ Vgs=10V, Id=40A) | 8mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Gate Leakage Current | ±100 maxnA |
| Maximum Power Dissipation (Tc=25°C) | 176W |
| Junction-to-Case Thermal Resistance | 0.85°C/W |
| Maximum Junction Temperature | 175°C |
| Avalanche Energy, Single Pulsed | 1.0J |
| Diode Forward Voltage | 0.8 typ, 1.3 maxV |
| Reverse Recovery Time | 50 typns |
| Reverse Recovery Charge | 80 typnC |
| Input Capacitance | 3200 typpF |
| Output Capacitance | 610 typpF |
| Reverse Transfer Capacitance | 250 typpF |
| Turn-On Delay Time | 15 typ, 27 maxns |
| Turn-On Rise Time | 13 typ, 24 maxns |
| Turn-Off Delay Time | 50 typ, 90 maxns |
| Turn-Off Fall Time | 36 typ, 65 maxns |
| Total Gate Charge | 55 typ, 77 maxnC |
| Gate-Source Charge | 12 typnC |
| Gate-Drain Charge | 18 typnC |
| RoHS | Compliant |
| Halogen Free | Yes |
| Green | Yes |
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