This device is an N-channel enhancement-mode power MOSFET in a TO-220 package. It is rated for 60 V drain-source voltage, 106 A continuous drain current at TC = 25°C, and 6.4 mΩ maximum on-resistance at VGS = 10 V. The datasheet lists 157.9 W maximum power dissipation at TC = 25°C, 57 nC typical total gate charge, and typical capacitances of 3300 pF input, 460 pF output, and 145 pF reverse transfer. It supports single-pulse avalanche operation, has 40 ns typical reverse recovery time, and is specified for an operating junction temperature range to 175°C with RoHS-compliant, halogen-free material options.
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Sinopower Semiconductor SM6021NSF technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 106A |
| Continuous Drain Current (TA=25°C) | 13A |
| Drain-Source On-Resistance | 6.4 max @ VGS=10V, ID=40AmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Power Dissipation (TC=25°C) | 157.9W |
| Thermal Resistance Junction-to-Case | 0.95°C/W |
| Avalanche Energy, Single Pulse | 342mJ |
| Input Capacitance | 3300 typpF |
| Output Capacitance | 460 typpF |
| Reverse Transfer Capacitance | 145 typpF |
| Total Gate Charge | 57 typ, 80 maxnC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 14.5nC |
| Reverse Recovery Time | 40 typns |
| Reverse Recovery Charge | 65 typnC |
| Operating Junction Temperature Range | -55 to 175°C |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
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