This device is an N-channel enhancement-mode power MOSFET rated for 60 V drain-source voltage. It supports 190 A continuous drain current at 25°C case temperature with a maximum drain-source on-resistance of 3.6 mΩ at 10 V gate drive. The part is supplied in a TO-220 package and operates over a -55°C to 150°C junction temperature range. The datasheet also specifies dynamic dv/dt capability, avalanche energy rating, and RoHS-compliant lead-free construction.
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Sinopower Semiconductor SM6033NAF technical specifications.
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (Tc=25°C, silicon limited) | 190A |
| Continuous Drain Current (Tc=25°C, wire bond limited) | 120A |
| Pulsed Drain Current | 380A |
| Maximum Power Dissipation (Tc=25°C) | 250W |
| Junction-to-Case Thermal Resistance | 0.5°C/W |
| Operating Junction Temperature | -55 to 150°C |
| Gate Threshold Voltage | 2 to 4V |
| Drain-Source On-Resistance | 3.6 max @ VGS=10V, IDS=40AmΩ |
| Input Capacitance | 6500 typpF |
| Output Capacitance | 1100 typpF |
| Reverse Transfer Capacitance | 400 typpF |
| Total Gate Charge | 120 typnC |
| Avalanche Energy | 900mJ |
| RoHS | Compliant |
Download the complete datasheet for Sinopower Semiconductor SM6033NAF to view detailed technical specifications.
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