This device is a 60 V N-channel power MOSFET in the DFN5x6A-8_EP1 package. The manufacturer page lists 100 A drain current at TC = 25°C and 15 A at TA = 25°C. Maximum on-resistance is 5 mΩ at 10 V gate drive and 6 mΩ at 4.5 V gate drive. The listed gate threshold voltage is 1 V minimum and 2 V typical, with typical input capacitance of 4300 pF and typical total gate charge of 90 nC at 10 V.
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Sinopower Semiconductor SM6126NSKP technical specifications.
| Configuration | N |
| Breakdown Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current (TC=25°C) | 100A |
| Drain Current (TA=25°C) | 15A |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Typ | 2V |
| Drain-Source On-Resistance @ VGS=10V Max | 5mΩ |
| Drain-Source On-Resistance @ VGS=4.5V Max | 6mΩ |
| Gate Resistance Typ | 1Ω |
| Input Capacitance Typ | 4300pF |
| Output Capacitance Typ | 400pF |
| Reverse Transfer Capacitance Typ | 225pF |
| Total Gate Charge @10V Typ | 90nC |
| Total Gate Charge @10V Max | 125nC |
| Total Gate Charge @4.5V Typ | 40nC |
| Total Gate Charge @4.5V Max | 45nC |
| Gate-Source Charge | 16nC |
| Gate-Drain Charge | 17nC |
Download the complete datasheet for Sinopower Semiconductor SM6126NSKP to view detailed technical specifications.
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