This device is a 60 V N-channel power MOSFET in a TO-251S package. It is rated for 80 A drain current at TC = 25°C and 14 A at TA = 25°C, with a maximum RDS(on) of 6.6 mΩ at 10 V gate drive and 8 mΩ at 4.5 V. The gate-source voltage rating is ±20 V, and the threshold voltage is 1 V minimum with 2 V typical. Typical capacitances are 4350 pF input, 425 pF output, and 215 pF reverse transfer, with total gate charge of 83 nC typical at 10 V.
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Sinopower Semiconductor SM6127NSUC technical specifications.
| Channel Configuration | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Drain Current (TC=25°C) | 80A |
| Drain Current (TA=25°C) | 14A |
| Gate Threshold Voltage (Min) | 1V |
| Gate Threshold Voltage (Typ) | 2V |
| RDS(on) Max @ VGS=10V | 6.6mΩ |
| RDS(on) Max @ VGS=4.5V | 8mΩ |
| Gate Resistance (Typ) | 1Ω |
| Input Capacitance (Typ) | 4350pF |
| Output Capacitance (Typ) | 425pF |
| Reverse Transfer Capacitance (Typ) | 215pF |
| Total Gate Charge (Typ) @ 10V | 83nC |
| Total Gate Charge (Max) @ 10V | 117nC |
| Total Gate Charge (Typ) @ 4.5V | 39nC |
| Gate-Source Charge | 17nC |
| Gate-Drain Charge | 15nC |
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