This N-channel MOSFET is rated for 60 V drain-source voltage and ±20 V gate-source voltage. It carries up to 80 A at TC=25°C and 16 A at TA=25°C in a TO-263-2 package. Maximum on-resistance is 5.4 mΩ at 10 V and 7.5 mΩ at 4.5 V. Typical input, output, and reverse-transfer capacitances are 2380 pF, 450 pF, and 65 pF, and total gate charge is 37 nC at 10 V.
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Sinopower Semiconductor SM6163NHG technical specifications.
| Configuration | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 80A |
| Continuous Drain Current (TA=25°C) | 16A |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Typ | 2V |
| Gate Threshold Voltage Max | 3V |
| RDS(on) Max @ VGS=10V | 5.4mΩ |
| RDS(on) Max @ VGS=4.5V | 7.5mΩ |
| Gate Resistance Typ | 1Ω |
| Input Capacitance Typ | 2380pF |
| Output Capacitance Typ | 450pF |
| Reverse Transfer Capacitance Typ | 65pF |
| Total Gate Charge Typ @10V | 37nC |
| Total Gate Charge Max @10V | 52nC |
| Total Gate Charge Typ @4.5V | 17nC |
| Gate-Source Charge | 9.1nC |
| Gate-Drain Charge | 5nC |
| RoHS | Compliant |
| Halogen Free | Yes |
| Lead Free | Yes |
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