This device is an N-channel enhancement mode MOSFET rated for 60 V drain-source voltage and ±20 V gate-source voltage. It supports 76 A continuous drain current at TC=25°C and 15 A at TA=25°C. Maximum drain-source on-resistance is 5.1 mΩ at VGS=10 V and 7.2 mΩ at VGS=4.5 V. Typical input, output, and reverse transfer capacitances are 2380 pF, 450 pF, and 65 pF. The part is offered in a DFN5x6A-8_EP1 package and is listed as New.
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Sinopower Semiconductor SM6163NHKP technical specifications.
| Channel Type | N-Channel |
| Drain-Source Breakdown Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (TC=25°C) | 76A |
| Continuous Drain Current (TA=25°C) | 15A |
| Gate Threshold Voltage | 1 to 3V |
| On-Resistance @ VGS=10V | 5.1 maxmΩ |
| On-Resistance @ VGS=4.5V | 7.2 maxmΩ |
| Input Capacitance | 2380 typpF |
| Output Capacitance | 450 typpF |
| Reverse Transfer Capacitance | 65 typpF |
| Total Gate Charge @ VGS=10V | 37.6 typ, 52.6 maxnC |
| Total Gate Charge @ VGS=4.5V | 17.1 typnC |
| Junction Temperature | 150 max°C |
| Storage Temperature Range | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 2.3°C/W |
| Avalanche Energy | 144mJ |
| Moisture Sensitivity Level | MSL1 |
| RoHS | Compliant |
| Halogen Free | Yes |
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