This device is a 60 V N-channel power MOSFET in a DFN5x6A-8_EP1 package. It supports a ±20 V gate-source rating and has a threshold voltage range of 1 V to 3 V. Continuous drain current is rated at 47 A at Tc = 25°C and 11.3 A at Ta = 25°C. Maximum on-resistance is 9 mΩ at 10 V and 13.7 mΩ at 4.5 V. Typical capacitances are 1225 pF input, 235 pF output, and 30 pF reverse transfer, and typical total gate charge is 20.6 nC at 10 V.
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Sinopower Semiconductor SM6166NHKP technical specifications.
| Polarity | N |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current (Tc=25°C) | 47A |
| Continuous Drain Current (Ta=25°C) | 11.3A |
| Gate Threshold Voltage Min | 1V |
| Gate Threshold Voltage Typ | 2V |
| Gate Threshold Voltage Max | 3V |
| RDS(on) Max @ VGS=10V | 9mΩ |
| RDS(on) Max @ VGS=4.5V | 13.7mΩ |
| Gate Resistance Typ | 1.5Ω |
| Input Capacitance Typ | 1225pF |
| Output Capacitance Typ | 235pF |
| Reverse Transfer Capacitance Typ | 30pF |
| Total Gate Charge Typ @ 10V | 20.6nC |
| Total Gate Charge Max @ 10V | 29nC |
| Total Gate Charge Typ @ 4.5V | 10nC |
| Gate-Source Charge | 4.3nC |
| Gate-Drain Charge | 3.7nC |
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