The 2N2102 is a TO-39 packaged NPN bipolar junction transistor with a collector-emitter breakdown voltage of 65V and a maximum collector current of 1A. It has a maximum power dissipation of 1W and operates over a temperature range of -65°C to 150°C. The transistor is lead-free and RoHS compliant. It is available in a package quantity of 50 and is packaged in a rail/tube format.
PackageTO-39
Current Rating1A
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics 2N2102 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 120V |
| Collector Emitter Breakdown Voltage | 65V |
| Collector Emitter Voltage (VCEO) | 65V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| hFE Min | 10 |
| Lead Free | Lead Free |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 120V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N2102 Datasheet
Download the complete datasheet for Stmicroelectronics 2N2102 to view detailed technical specifications.
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