NPN Bipolar Junction Transistor (BJT) for general-purpose applications. Features a 60V collector-emitter voltage and 0.03A maximum collector current. Housed in a 6-pin TO-77 metal package with through-hole mounting. Offers a maximum power dissipation of 1000mW and operates across a temperature range of -65°C to 200°C. Dual transistor configuration with silicon material.
PackageTO-77
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N2920AHR technical specifications.
General
| Basic Package Type | Through Hole |
| Package/Case | TO-77 |
| Package Description | Transistor Outline Package |
| Lead Shape | Through Hole |
| Pin Count | 6 |
| PCB | 6 |
| Package Height (mm) | 6.47(Max) |
| Package Diameter (mm) | 9.25(Max) |
| Package Material | Metal |
| Mounting | Through Hole |
| Type | NPN |
| Configuration | Dual |
| Number of Elements per Chip | 2 |
| Maximum Collector Base Voltage | 60V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 60V |
| Maximum DC Collector Current | 0.03A |
| Maximum Power Dissipation | 1000mW |
| Material | Si |
| Minimum DC Current Gain | 150@10uA@5V|[email protected]@5V|300@1mA@5V |
| Maximum Transition Frequency | 60(Min)MHz |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | SCR76 |
| EU RoHS | No |
| HTS Code | 8541290075 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | Yes |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Stmicroelectronics 2N2920AHR Datasheet
Download the complete datasheet for Stmicroelectronics 2N2920AHR to view detailed technical specifications.
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