NPN bipolar junction transistor in TO-39 package, featuring 80V collector-emitter breakdown voltage and 1A maximum collector current. Offers 100MHz transition frequency and a minimum DC current gain (hFE) of 100. Designed for through-hole mounting, this RoHS compliant component operates from -65°C to 175°C with a maximum power dissipation of 800mW.
Frequency100MHz
PackageTO-39
Current Rating1A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N3019 technical specifications.
General
Package/Case
TO-39
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
500mV
Current Rating
1A
Diameter
9.4mm
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
100MHz
Height
6.6mm
hFE Min
100
Lead Free
Lead Free
Length
9.4mm
Max Collector Current
1A
Max Frequency
100MHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
800mW
Mount
Through Hole
Package Quantity
500
Packaging
Rail/Tube
Polarity
NPN
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
140V
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N3019 Datasheet
Download the complete datasheet for Stmicroelectronics 2N3019 to view detailed technical specifications.
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