
NPN bipolar junction transistor in TO-39 package, featuring 80V collector-emitter breakdown voltage and 1A maximum collector current. Offers 100MHz transition frequency and a minimum DC current gain (hFE) of 100. Designed for through-hole mounting, this RoHS compliant component operates from -65°C to 175°C with a maximum power dissipation of 800mW.
Stmicroelectronics 2N3019 technical specifications.
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 140V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Diameter | 9.4mm |
| Emitter Base Voltage (VEBO) | 7V |
| Gain Bandwidth Product | 100MHz |
| Height | 6.6mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 9.4mm |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 800mW |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 140V |
| Width | 9.4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics 2N3019 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.