NPN Bipolar Junction Transistor (BJT) for through-hole, chassis mount applications. Features a 60V collector-emitter voltage (VCEO) and 15A maximum collector current. Offers a 3MHz gain bandwidth product and 115W power dissipation. Operates within a temperature range of -65°C to 200°C. Packaged in a TO-3 case.
PackageTO-3
Voltage60V
Current15A
Current Rating15A
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Technical Specifications
Stmicroelectronics 2N3055 technical specifications.
General
Package/Case
TO-3
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
1V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
3V
Current
15A
Current Rating
15A
Emitter Base Voltage (VEBO)
7V
Gain Bandwidth Product
3MHz
Height
8.7mm
hFE Min
20
Lead Free
Lead Free
Length
39.5mm
Max Breakdown Voltage
60V
Max Collector Current
15A
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
115W
Mount
Through Hole, Chassis Mount
Package Quantity
100
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
115W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
3MHz
Voltage
60V
DC Rated Voltage
60V
Width
26.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N3055 Datasheet
Download the complete datasheet for Stmicroelectronics 2N3055 to view detailed technical specifications.
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