NPN Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 350V collector-emitter breakdown voltage and 1A maximum collector current. Operates with a minimum DC current gain (hFE) of 30 and a transition frequency of 15MHz. Housed in a TO-39 package with through-hole mounting. RoHS compliant with a maximum power dissipation of 10W.
Frequency15MHz
PackageTO-39
Current Rating1A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N3439 technical specifications.
General
| Package/Case | TO-39 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 1A |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| Height | 6.6mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 9.4mm |
| Max Collector Current | 1A |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 100 |
| Packaging | Tray |
| Polarity | NPN |
| Power Dissipation | 10W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N3439 |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 450V |
| Width | 9.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N3439 Datasheet
Download the complete datasheet for Stmicroelectronics 2N3439 to view detailed technical specifications.
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