NPN bipolar junction transistor in a TO-257 package, featuring a maximum collector-emitter voltage of 80V and a continuous collector current of 5A. This single-element silicon transistor offers a maximum power dissipation of 3300mW and a wide operating temperature range from -65°C to 200°C. The 3-pin through-hole component has a pin pitch of 2.54mm and is housed in a plastic TO-257AA package with dimensions up to 10.67mm (L) x 5.08mm (W) x 10.92mm (H). DC current gain ranges from 40 at 5A/5V to 70 at 2.5A/5V.
PackageTO-257
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics 2N5154ESY technical specifications.
General
| Package Family Name | TO-257 |
| Package/Case | TO-257 |
| Pin Count | 3 |
| PCB | 3 |
| Tab | Tab |
| Package Length (mm) | 10.67(Max) |
| Package Width (mm) | 5.08(Max) |
| Package Height (mm) | 10.92(Max) |
| Pin Pitch (mm) | 2.54 |
| Package Material | Plastic |
| Mounting | Through Hole |
| Jedec | TO-257AA |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 100V |
| Maximum Emitter Base Voltage | 6V |
| Maximum Collector-Emitter Voltage | 80V |
| Maximum DC Collector Current | 5A |
| Maximum Power Dissipation | 3300mW |
| Material | Si |
| Minimum DC Current Gain | 40@5A@5V|[email protected]@5V|50@50mA@5V |
| Category | Bipolar Power |
| Min Operating Temperature | -65°C |
| Max Operating Temperature | 200°C |
Compliance
| Cage Code | SCR76 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2002/95/EC |
Datasheet
Stmicroelectronics 2N5154ESY Datasheet
Download the complete datasheet for Stmicroelectronics 2N5154ESY to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.