NPN Bipolar Junction Transistor (BJT) designed for through-hole mounting in a SOT-32 package. Features a maximum collector current of 4A and a power dissipation of 40W. Offers a collector-emitter voltage (VCEO) of 80V and a transition frequency of 2MHz. Minimum DC current gain (hFE) is 20. This component is RoHS compliant and operates within a temperature range of -65°C to 150°C.
Frequency2MHz
PackageSOT-32
Current Rating4A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N5192 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1.2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1.4V |
| Current Rating | 4A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 2MHz |
| Height | 11.05mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Frequency | 2MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | 80V |
| Width | 2.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N5192 Datasheet
Download the complete datasheet for Stmicroelectronics 2N5192 to view detailed technical specifications.
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