PNP Silicon Bipolar Junction Transistor (BJT) in a TO-39 package. Features a maximum collector current of 1A and a collector-emitter voltage (VCEO) of 200V. Offers a transition frequency of 15MHz and a minimum DC current gain (hFE) of 30. Maximum power dissipation is 1W, with operating temperatures ranging from -65°C to 200°C. This through-hole component is RoHS compliant and lead-free.
Frequency15MHz
PackageTO-39
Voltage300V
Current200mA
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Technical Specifications
Stmicroelectronics 2N5415 technical specifications.
General
Package/Case
TO-39
Collector Base Voltage (VCBO)
200V
Collector Emitter Breakdown Voltage
200V
Collector Emitter Saturation Voltage
-2.5V
Collector Emitter Voltage (VCEO)
200V
Collector-emitter Voltage-Max
2.5V
Current
200mA
Current Rating
-1A
Diameter
9.4mm
Emitter Base Voltage (VEBO)
-4V
Frequency
15MHz
Gain Bandwidth Product
15MHz
Height
6.6mm
hFE Min
30
Lead Free
Lead Free
Length
9.4mm
Max Collector Current
1A
Max Frequency
15MHz
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Number of Elements
1
Package Quantity
100
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
1W
RoHS Compliant
Yes
Transition Frequency
15MHz
Voltage
300V
DC Rated Voltage
-200V
Width
9.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N5415 Datasheet
Download the complete datasheet for Stmicroelectronics 2N5415 to view detailed technical specifications.
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