The 2N5657 is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 350V and a maximum collector current of 500mA. It has a maximum power dissipation of 20W and is packaged in a TO-126-3 case, suitable for through-hole mounting. The transistor is RoHS compliant and is available in a rail or tube packaging format. It has a transition frequency of 10MHz and a DC rated voltage of 375V.
PackageTO-126-3
Current Rating500mA
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N5657 technical specifications.
General
| Package/Case | TO-126-3 |
| Collector Emitter Breakdown Voltage | 350V |
| Collector-emitter Voltage-Max | 10V |
| Current Rating | 500mA |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Power Dissipation | 20W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| RoHS Compliant | Yes |
| Transition Frequency | 10MHz |
| DC Rated Voltage | 375V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N5657 Datasheet
Download the complete datasheet for Stmicroelectronics 2N5657 to view detailed technical specifications.
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