PNP Silicon Power Transistor, TO-126 package, featuring a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. This through-hole mounted component offers a maximum power dissipation of 40W and a minimum hFE of 100. Operating temperature range spans from -65°C to 150°C, with a collector-emitter saturation voltage of 2V. The plastic package is RoHS compliant and lead-free.
PackageSOT-32
Current Rating-4A
MountingThrough Hole
PolarityPNP, NPN
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Technical Specifications
Stmicroelectronics 2N6036 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 3V |
| Contact Plating | Tin, Matte |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 11.05mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP, NPN |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -80V |
| Width | 2.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N6036 Datasheet
Download the complete datasheet for Stmicroelectronics 2N6036 to view detailed technical specifications.
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