PNP Silicon Power Transistor, TO-220AB package, featuring a 7A maximum collector current and 30V collector-emitter voltage. This through-hole component offers a 40W power dissipation and a transition frequency of 4MHz. Key specifications include a 40V collector-base voltage, 5V emitter-base voltage, and a minimum hFE of 23. The device operates within a temperature range of -65°C to 150°C and is RoHS compliant with tin matte contact plating.
Frequency4MHz
PackageTO-220-3
Current Rating-7A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2N6111 technical specifications.
General
Package/Case
TO-220-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
-1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
3.5V
Contact Plating
Tin, Matte
Current Rating
-7A
Emitter Base Voltage (VEBO)
5V
Frequency
4MHz
Gain Bandwidth Product
4MHz
Height
15.75mm
hFE Min
23
Lead Free
Lead Free
Length
10.4mm
Max Collector Current
7A
Max Frequency
4MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
40W
Mount
Through Hole
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
40W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
4MHz
DC Rated Voltage
-40V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N6111 Datasheet
Download the complete datasheet for Stmicroelectronics 2N6111 to view detailed technical specifications.
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