NPN Silicon Power Bipolar Junction Transistor (BJT) in a TO-3 metal package. Features a maximum collector current of 15A and a collector-emitter breakdown voltage of 400V. Offers a maximum power dissipation of 175W and a transition frequency of 24MHz. Designed for chassis mount and through-hole applications with a 2-pin configuration. RoHS compliant and operates within a temperature range of -65°C to 200°C.
Frequency24MHz
PackageTO-3
Current Rating15A
MountingChassis Mount, Through Hole
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Technical Specifications
Stmicroelectronics 2N6547 technical specifications.
General
| Package/Case | TO-3 |
| Collector Base Voltage (VCBO) | 850V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | 15A |
| Emitter Base Voltage (VEBO) | 9V |
| Frequency | 24MHz |
| Gain Bandwidth Product | 24MHz |
| Height | 26mm |
| hFE Min | 6 |
| Lead Free | Lead Free |
| Length | 39.3mm |
| Max Collector Current | 15A |
| Max Frequency | 24MHz |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 175W |
| Mount | Chassis Mount, Through Hole |
| Number of Elements | 1 |
| Package Quantity | 20 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 175W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | 2N6547 |
| Transition Frequency | 24MHz |
| DC Rated Voltage | 850V |
| Width | 8.92mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2N6547 Datasheet
Download the complete datasheet for Stmicroelectronics 2N6547 to view detailed technical specifications.
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