N-channel MOSFET, TO-92 package, offering 60V drain-source breakdown voltage and 350mA continuous drain current. Features include 5.3 Ohm on-state resistance, 43pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mount, RoHS compliant.
PackageTO-92
Current Rating200mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics 2N7000 technical specifications.
General
Package/Case
TO-92
Continuous Drain Current (ID)
350mA
Current Rating
200mA
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
1.8R
Drain to Source Voltage (Vdss)
60V
Dual Supply Voltage
60V
Gate to Source Voltage (Vgs)
18V
Height
4.95mm
Input Capacitance
43pF
Lead Free
Lead Free
Lead Pitch
1.27mm
Length
4.95mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1W
Mount
Through Hole
Nominal Vgs
2.1V
On-State Resistance
5.3R
Package Quantity
2500
Packaging
Bulk
Polarity
N-CHANNEL
Power Dissipation
1W
Rds On Max
5R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
2.1V
Turn-Off Delay Time
7ns
Turn-On Delay Time
5ns
DC Rated Voltage
60V
Width
3.94mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2N7000 Datasheet
Download the complete datasheet for Stmicroelectronics 2N7000 to view detailed technical specifications.
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