STMICROELECTRONICS

2N7000

Datasheet

N-Channel MOSFET, 60V, 350mA, TO-92, Through Hole

Stmicroelectronics

2N7000

Name: 2N7000 Stmicroelectronics
Brand: Stmicroelectronics
SKU: 2N7000

N-Channel MOSFET, 60V, 350mA, TO-92, Through Hole

N-channel MOSFET, TO-92 package, offering 60V drain-source breakdown voltage and 350mA continuous drain current. Features include 5.3 Ohm on-state resistance, 43pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mount, RoHS compliant.

PackageTO-92

Current Rating200mA

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Stmicroelectronics 2N7000 technical specifications.

General

Package/Case	TO-92
Continuous Drain Current (ID)	350mA
Current Rating	200mA
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	1.8R
Drain to Source Voltage (Vdss)	60V
Dual Supply Voltage	60V
Gate to Source Voltage (Vgs)	18V
Height	4.95mm
Input Capacitance	43pF
Lead Free	Lead Free
Lead Pitch	1.27mm
Length	4.95mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	1W
Mount	Through Hole
Nominal Vgs	2.1V
On-State Resistance	5.3R
Package Quantity	2500
Packaging	Bulk
Polarity	N-CHANNEL
Power Dissipation	1W
Rds On Max	5R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	STripFET™
Threshold Voltage	2.1V
Turn-Off Delay Time	7ns
Turn-On Delay Time	5ns
DC Rated Voltage	60V
Width	3.94mm