PNP Silicon Bipolar Junction Transistor (BJT) with a 3A continuous collector current and 30V collector-emitter breakdown voltage. Features a maximum power dissipation of 12.5W and a transition frequency of 100MHz. Packaged in a TO-126 (SOT-32) through-hole mount with tin-matte plating, this RoHS compliant component operates from -65°C to 150°C.
Frequency100MHz
PackageSOT-32
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2SB772 technical specifications.
General
| Package/Case | SOT-32 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.1V |
| Contact Plating | Tin, Matte |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 10.8mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 7.8mm |
| Max Collector Current | 3A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 12.5W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 12.5W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -30V |
| Width | 2.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics 2SB772 Datasheet
Download the complete datasheet for Stmicroelectronics 2SB772 to view detailed technical specifications.
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