PNP Silicon Bipolar Junction Transistor (BJT) with a 3A continuous collector current and 30V collector-emitter breakdown voltage. Features a maximum power dissipation of 12.5W and a transition frequency of 100MHz. Packaged in a TO-126 (SOT-32) through-hole mount with tin-matte plating, this RoHS compliant component operates from -65°C to 150°C.
Frequency100MHz
PackageSOT-32
Current Rating-3A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics 2SB772 technical specifications.
General
Package/Case
SOT-32
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
1.1V
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
1.1V
Contact Plating
Tin, Matte
Current Rating
-3A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
10.8mm
hFE Min
100
Lead Free
Lead Free
Length
7.8mm
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
12.5W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
12.5W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Width
2.7mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2SB772 Datasheet
Download the complete datasheet for Stmicroelectronics 2SB772 to view detailed technical specifications.
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