PNP epitaxial planar bipolar transistor designed for high power applications. Features a maximum collector current of 10A and a maximum power dissipation of 100W. Offers a collector-emitter breakdown voltage of 140V and a transition frequency of 20MHz. This through-hole mounted component operates within a temperature range of -65°C to 150°C and is RoHS compliant.
Frequency20MHz
MountingThrough Hole
PolarityPNP
Power100W
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Technical Specifications
Stmicroelectronics 2STA1695 technical specifications.
General
Collector Base Voltage (VCBO)
140V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
hFE Min
70
Lead Free
Lead Free
Max Breakdown Voltage
140V
Max Collector Current
10A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
100W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
100W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
2ST1695
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STA1695 Datasheet
Download the complete datasheet for Stmicroelectronics 2STA1695 to view detailed technical specifications.
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