PNP Silicon Power Transistor, 230V Collector-Emitter Voltage (VCEO), 15A Max Collector Current, and 130W Max Power Dissipation. Features a 30MHz Transition Frequency and a minimum hFE of 80. Operates within a temperature range of -55°C to 150°C. Packaged in a TO-3P, 3-pin through-hole mount configuration, this RoHS compliant component is designed for high-power applications.
Frequency30MHz
MountingThrough Hole
PolarityPNP
Power130W
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Technical Specifications
Stmicroelectronics 2STA1962 technical specifications.
General
Collector Base Voltage (VCBO)
230V
Collector Emitter Breakdown Voltage
230V
Collector Emitter Saturation Voltage
3V
Collector Emitter Voltage (VCEO)
230V
Collector-emitter Voltage-Max
3V
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
18.7mm
hFE Min
80
Lead Free
Lead Free
Length
15.8mm
Max Breakdown Voltage
230V
Max Collector Current
15A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
130W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STA1962 Datasheet
Download the complete datasheet for Stmicroelectronics 2STA1962 to view detailed technical specifications.
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