PNP Silicon Power Transistor featuring a 100V Collector-Emitter Breakdown Voltage and a maximum Collector Current of 25A. This through-hole mounted component offers a 125W Power Dissipation and a transition frequency of 20MHz. It operates within a temperature range of -65°C to 150°C and is RoHS compliant. The transistor is packaged in a TO-3P, 3-pin configuration.
Frequency20MHz
MountingThrough Hole
PolarityPNP
Power125W
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Technical Specifications
Stmicroelectronics 2STA2510 technical specifications.
General
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
1.5V
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
100V
Max Collector Current
25A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
125W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
PNP
Power Dissipation
125W
Radiation Hardening
No
RoHS Compliant
Yes
Series
2ST2510
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STA2510 Datasheet
Download the complete datasheet for Stmicroelectronics 2STA2510 to view detailed technical specifications.
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