NPN Bipolar Junction Transistor (BJT) for power applications. Features a maximum collector current of 8A and a collector-emitter breakdown voltage of 120V. Operates with a transition frequency of 20MHz and a maximum power dissipation of 80W. Housed in a TO-3P package with 3 pins, this RoHS compliant component is designed for through-hole mounting.
Frequency20MHz
MountingThrough Hole
PolarityNPN
Power80W
Quick Jump:
Technical Specifications
Stmicroelectronics 2STC4467 technical specifications.
General
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
120V
Collector Emitter Voltage (VCEO)
120V
Collector-emitter Voltage-Max
1.5V
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
Lead Free
Lead Free
Max Breakdown Voltage
120V
Max Collector Current
8A
Max Frequency
20MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
80W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
80W
Radiation Hardening
No
RoHS Compliant
Yes
Series
2STC4467
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STC4467 Datasheet
Download the complete datasheet for Stmicroelectronics 2STC4467 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.