High power NPN epitaxial planar bipolar transistor featuring a 140V collector-emitter breakdown voltage and 10A maximum collector current. This through-hole mounted component offers a 20MHz transition frequency and 100W power dissipation. Operating across a wide temperature range from -65°C to 150°C, it is RoHS compliant and lead-free.
Frequency20MHz
MountingThrough Hole
PolarityNPN
Power100W
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Technical Specifications
Stmicroelectronics 2STC4468 technical specifications.
General
Collector Base Voltage (VCBO)
200V
Collector Emitter Breakdown Voltage
140V
Collector Emitter Voltage (VCEO)
140V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
hFE Min
70
Lead Free
Lead Free
Max Breakdown Voltage
140V
Max Collector Current
10A
Max Frequency
20MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
100W
Mount
Through Hole
Number of Elements
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
100W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STC4468 Datasheet
Download the complete datasheet for Stmicroelectronics 2STC4468 to view detailed technical specifications.
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