High power NPN epitaxial planar bipolar transistor featuring a maximum collector current of 15A and a maximum power dissipation of 130W. Collector-emitter breakdown voltage reaches 230V, with a minimum hFE of 80 and a transition frequency of 30MHz. This through-hole mount component operates from -55°C to 150°C and is RoHS compliant with tin matte contact plating.
Frequency30MHz
MountingThrough Hole
PolarityNPN
Power130W
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Technical Specifications
Stmicroelectronics 2STC5242 technical specifications.
General
Collector Base Voltage (VCBO)
230V
Collector Emitter Breakdown Voltage
230V
Collector Emitter Saturation Voltage
3V
Collector Emitter Voltage (VCEO)
230V
Collector-emitter Voltage-Max
3V
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
18.7mm
hFE Min
80
Lead Free
Lead Free
Length
15.8mm
Max Collector Current
15A
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
130W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
130W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
Width
5mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STC5242 Datasheet
Download the complete datasheet for Stmicroelectronics 2STC5242 to view detailed technical specifications.
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