NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter breakdown voltage and a 3A continuous collector current rating. Offers a maximum power dissipation of 1.4W and a transition frequency of 130MHz. Packaged in a SOT-89 surface mount case with tin, matte plating. Operates from -65°C to 150°C and is RoHS compliant.
Frequency130MHz
PackageSOT-89
Current Rating3A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STF1360 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Contact Plating
Tin, Matte
Current Rating
3A
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.6mm
hFE Min
80
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.4W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
80V
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STF1360 Datasheet
Download the complete datasheet for Stmicroelectronics 2STF1360 to view detailed technical specifications.
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