PNP Bipolar Junction Transistor (BJT) for surface mount applications. Features 80V collector-emitter voltage and 2A continuous collector current. Housed in a SOT-89 (TO-243AA) plastic package with 4 leads (3+tab), offering a maximum power dissipation of 1400mW. Minimum DC current gain is 140 at 100mA/2V. Operates across a temperature range of -65°C to 150°C.
PackageSOT-89
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STF2280 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-89
Package/Case
SOT-89
Package Description
Small Outline Transistor
Lead Shape
Flat
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
4.6(Max)
Package Width (mm)
2.6(Max)
Package Height (mm)
1.6(Max)
Seated Plane Height (mm)
1.6(Max)
Pin Pitch (mm)
1.57(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-243AA
Type
PNP
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
80V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
80V
Maximum DC Collector Current
2A
Maximum Power Dissipation
1400mW
Minimum DC Current Gain
140@100mA@2V|100@500mA@2V|80@1A@2V
Maximum Transition Frequency
50(Typ)MHz
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes
HTS Code
8541290075
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics 2STF2280 Datasheet
Download the complete datasheet for Stmicroelectronics 2STF2280 to view detailed technical specifications.
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