PNP Silicon Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector current of 3A and a collector-emitter voltage of 40V. Offers a minimum DC current gain (hFE) of 280 and a transition frequency of 100MHz. Housed in a compact SOT-89 plastic package with matte tin plating. RoHS compliant with a maximum power dissipation of 1.4W.
Frequency100MHz
PackageSOT-89
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Stmicroelectronics 2STF2340 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
350mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
350mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
1.6mm
hFE Min
280
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
40V
Max Collector Current
3A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN, PNP
Power Dissipation
1.4W
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
100MHz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STF2340 Datasheet
Download the complete datasheet for Stmicroelectronics 2STF2340 to view detailed technical specifications.
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