PNP Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V Collector-Emitter Voltage (VCEO) and a maximum collector current of 3A. Operates with a transition frequency of 130MHz and a minimum hFE of 80. Packaged in a SOT-89 surface mount case, this lead-free and RoHS compliant component offers a maximum power dissipation of 1.4W.
Frequency130MHz
PackageSOT-89
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics 2STF2360 technical specifications.
General
Package/Case
SOT-89
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
6V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
1.6mm
hFE Min
80
Lead Free
Lead Free
Length
4.6mm
Max Breakdown Voltage
60V
Max Collector Current
3A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
1.4W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
130MHz
Width
2.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STF2360 Datasheet
Download the complete datasheet for Stmicroelectronics 2STF2360 to view detailed technical specifications.
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