The 2STN2550 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 5A. It has a maximum power dissipation of 1.6W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-261-4 surface mount package and is available on tape and reel. It is not RoHS compliant.
PackageTO-261-4
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics 2STN2550 technical specifications.
General
| Package/Case | TO-261-4 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 550mV |
| Emitter Base Voltage (VEBO) | 5V |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 5A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics 2STN2550 Datasheet
Download the complete datasheet for Stmicroelectronics 2STN2550 to view detailed technical specifications.
No datasheet is available for this part.