NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a maximum collector-emitter voltage of 160V and a continuous collector current of 0.6A. This single-element transistor offers a maximum power dissipation of 2000mW and is housed in a 4-pin SOT-223 plastic package with gull-wing leads. Operating temperature range is -65°C to 150°C.
PackageSOT-223
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STN5551 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-223
Package/Case
SOT-223
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
4
PCB
3
Tab
Tab
Package Length (mm)
6.5
Package Width (mm)
3.5
Package Height (mm)
1.8(Max)
Seated Plane Height (mm)
1.9(Max)
Pin Pitch (mm)
2.3
Package Material
Plastic
Mounting
Surface Mount
Type
NPN
Configuration
Single Dual Collector
Number of Elements per Chip
1
Maximum Collector Base Voltage
180V
Maximum Emitter Base Voltage
6V
Maximum Collector-Emitter Voltage
160V
Maximum DC Collector Current
0.6A
Maximum Power Dissipation
2000mW
Minimum DC Current Gain
80@1mA@5V|80@10mA@5V|30@50mA@5V
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics 2STN5551 Datasheet
Download the complete datasheet for Stmicroelectronics 2STN5551 to view detailed technical specifications.
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