NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 30V collector-emitter breakdown voltage and a 1.5A maximum collector current. This surface-mount transistor offers a low saturation voltage of 850mV and a minimum hFE of 210. Packaged in a compact SOT-23, it operates from -65°C to 150°C and is RoHS compliant.
PackageSOT-23
Current Rating1.5A
MountingSurface Mount
PolarityNPN
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Technical Specifications
Stmicroelectronics 2STR1230 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
850mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
850mV
Contact Plating
Tin, Matte
Current Rating
1.5A
Emitter Base Voltage (VEBO)
5V
Height
0.95mm
hFE Min
210
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
1.5A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
DC Rated Voltage
30V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STR1230 Datasheet
Download the complete datasheet for Stmicroelectronics 2STR1230 to view detailed technical specifications.
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