NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 30V collector-emitter voltage and 1.5A continuous collector current. Housed in a compact 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Offers a maximum power dissipation of 500mW and a wide operating temperature range from -65°C to 150°C. Minimum DC current gain ranges from 80 to 210 depending on operating conditions.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STR1230G technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT-23
Package/Case
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pin Count
3
PCB
3
Package Length (mm)
3.04(Max)
Package Width (mm)
1.6(Max)
Package Height (mm)
1.3(Max)
Seated Plane Height (mm)
1.4(Max)
Pin Pitch (mm)
1.05(Max)
Package Material
Plastic
Mounting
Surface Mount
Jedec
TO-236AB
Type
NPN
Configuration
Single
Number of Elements per Chip
1
Maximum Collector Base Voltage
30V
Maximum Emitter Base Voltage
5V
Maximum Collector-Emitter Voltage
30V
Maximum DC Collector Current
1.5A
Maximum Power Dissipation
500mW
Minimum DC Current Gain
210@50mA@2V|[email protected]@2V|130@1A@2V|80@2A@2V
Category
Bipolar Power
Min Operating Temperature
-65°C
Max Operating Temperature
150°C
Compliance
Cage Code
SCR76
EU RoHS
Yes
Schedule B
8541210080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics 2STR1230G Datasheet
Download the complete datasheet for Stmicroelectronics 2STR1230G to view detailed technical specifications.
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