PNP Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a -30V collector-emitter breakdown voltage and a -1.5A maximum collector current. Operates with a 100MHz transition frequency and a minimum hFE of 70. Packaged in a SOT-23 surface-mount case, this RoHS compliant component offers a maximum power dissipation of 500mW and an operating temperature range of -65°C to 150°C.
Frequency100MHz
PackageSOT-23
Current Rating-1.5A
MountingSurface Mount
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Technical Specifications
Stmicroelectronics 2STR2230 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
-30V
Collector Emitter Saturation Voltage
-420mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
800mV
Current Rating
-1.5A
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.95mm
hFE Min
70
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
30V
Max Collector Current
1.5A
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
500mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
500mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
-30V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STR2230 Datasheet
Download the complete datasheet for Stmicroelectronics 2STR2230 to view detailed technical specifications.
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