NPN bipolar junction transistor (BJT) for power applications, featuring a 6A maximum collector current and 80V collector-emitter breakdown voltage. This through-hole mounted component is housed in a TO-247 package, offering a maximum power dissipation of 60W. Key electrical specifications include a 100V collector-base voltage, 6V emitter-base voltage, and a minimum hFE of 50. Operating across a wide temperature range from -65°C to 150°C, this RoHS compliant transistor has a transition frequency of 20MHz.
Frequency20MHz
PackageTO-247
MountingThrough Hole
PolarityNPN
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Technical Specifications
Stmicroelectronics 2STW4466 technical specifications.
General
Package/Case
TO-247
Collector Base Voltage (VCBO)
100V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
1.5V
Emitter Base Voltage (VEBO)
6V
Frequency
20MHz
Gain Bandwidth Product
20MHz
hFE Min
50
Lead Free
Lead Free
Max Collector Current
6A
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Elements
1
Package Quantity
30
Packaging
Rail/Tube
Polarity
NPN
Power Dissipation
60W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
20MHz
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STW4466 Datasheet
Download the complete datasheet for Stmicroelectronics 2STW4466 to view detailed technical specifications.
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