NPN Bipolar Junction Transistor (BJT) for low voltage, fast-switching applications. Features a 60V collector-emitter voltage (VCEO) and 3A maximum collector current. Offers a 500mV collector-emitter saturation voltage and 130MHz transition frequency. Packaged in a TO-92 through-hole mount, this lead-free component operates from -65°C to 150°C with 1W maximum power dissipation.
Frequency130MHz
PackageTO-92
Current Rating3A
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics 2STX1360 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
80V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
500mV
Current Rating
3A
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
130MHz
Height
4.95mm
hFE Min
80
Lead Free
Lead Free
Length
4.95mm
Max Collector Current
3A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1W
Mount
Through Hole
Package Quantity
2500
Packaging
Bulk
Polarity
NPN
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
80V
Width
3.94mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics 2STX1360 Datasheet
Download the complete datasheet for Stmicroelectronics 2STX1360 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
