NPN silicon bipolar junction transistor for small signal applications. Features a 45V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 200MHz transition frequency and offers a minimum hFE of 20. Packaged in a TO-18 metal package with through-hole mounting. Rated for continuous power dissipation of 390mW and operates across a temperature range of -55°C to 175°C. Lead-free and RoHS compliant.
Frequency200MHz
PackageTO-18
Current Rating100mA
MountingThrough Hole
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Technical Specifications
Stmicroelectronics BCY59X technical specifications.
General
| Package/Case | TO-18 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Collector Current | 200mA |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 390mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 390mW |
| RoHS Compliant | Yes |
| Transition Frequency | 200MHz |
| DC Rated Voltage | 42V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics BCY59X Datasheet
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